Metamorphic H-Band Low-Noise Amplifier MMICs

In this paper, we present the development of H-band (220 -325 GHz) low-noise amplifier MMICs for use in next generation high-resolution imaging systems. The amplifier circuits have been realized using an advanced 70-nm InAlAs/InGaAs based metamorphic high electron mobility transistor (MHEMT) technology. Furthermore, airbridge type transmission lines (ABTL) and conductor-backed coplanar circuit topology (CBCPW) were applied, leading to a compact chip size and excellent gain performance at high millimeter-wave frequencies. A realized four-stage ABTL low-noise amplifier circuit exhibited a small-signal gain of more than 18 dB between 216 and 238 GHz, while a four-stage coplanar LNA MMIC achieved a linear gain of 15 dB at 225 GHz and more than 12 dB over the bandwidth from 217 to 245 GHz.