Schottky Contact RF MEMS Switch Characterization

This paper presents measured results for a novel Schottky barrier contact-based RF MEMS switch, specifically S-parameter and IP2 linearity measurements. The Schottky barrier contact allows one to operate the RF MEMS switch in a traditional capacitive mode when it is reverse biased, but can also conduct current in a forward biased state to discharge trapped charges. This configuration improves reliability, but increases insertion loss. This work intimately combines MEMS processing with solid-state electronics to produce a truly unique RF device. To the author´s knowledge, nothing similar to this work has ever been reported.