Schottky Contact RF MEMS Switch Characterization

Author

Pillans, Brandon ; Morris, Frank ; Chahal, Prem ; Frazier, Gary ; Lee, Jeong-Bong

Author_Institution

Raytheon Co., Dallas

fYear

2007

fDate

3-8 June 2007

Firstpage

379

Lastpage

382

Abstract

This paper presents measured results for a novel Schottky barrier contact-based RF MEMS switch, specifically S-parameter and IP2 linearity measurements. The Schottky barrier contact allows one to operate the RF MEMS switch in a traditional capacitive mode when it is reverse biased, but can also conduct current in a forward biased state to discharge trapped charges. This configuration improves reliability, but increases insertion loss. This work intimately combines MEMS processing with solid-state electronics to produce a truly unique RF device. To the author´s knowledge, nothing similar to this work has ever been reported.

Keywords

Schottky barriers; microswitches; microwave switches; RF MEMS switch; S-parameter; Schottky barrier contact; solid-state electronics; Contacts; Electron traps; Insertion loss; Linearity; Micromechanical devices; Radiofrequency microelectromechanical systems; Scattering parameters; Schottky barriers; Solid state circuits; Switches; Dielectric breakdown; RF MEMS; Schottky barriers; Schottky diodes; intermodulation distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380450

Filename

4263827