Title :
Strain relaxation effect by nano-pattern etching in InGaN/GaN quantum well structures grown by rf-plasma assisted molecular beam epitaxy.
Author :
Vadivelu, Ramesh ; Kikuchi, Akihiko ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
Abstract :
The IQE of InGaN quantum-wells emit from green to red is not so high due to spatial separation of electrons and holes by strain-induced piezo-electric-field. The strain relaxation in InGaN-QWs by nano etching is discussed.
Keywords :
III-V semiconductors; etching; gallium compounds; indium compounds; molecular beam epitaxial growth; nanopatterning; photoluminescence; piezoelectricity; plasma materials processing; semiconductor growth; semiconductor quantum wells; stress relaxation; wide band gap semiconductors; InGaN-GaN; electron-hole separation; nanopattern etching; photoluminescence; quantum well structures; rf-plasma assisted molecular beam epitaxy; strain relaxation; strain-induced piezoelectric-field; Capacitive sensors; Charge carrier processes; Electron emission; Etching; Gallium nitride; Molecular beam epitaxial growth; Optoelectronic devices; Plasma temperature; Quantum well devices; Scanning electron microscopy;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634539
