DocumentCode :
2966507
Title :
Advanced MBE Low temperature grown materials for CW THz generation and detection
Author :
Missous, M.
Author_Institution :
Microelectron. & Nanostruct. Group, Univ. of Manchester, Manchester, UK
fYear :
2011
fDate :
28-31 Oct. 2011
Firstpage :
184
Lastpage :
186
Abstract :
A detailed characterization of undoped and Be doped Low temperature grown InGaAs-InAlAs structures is undertaken to correlate the structural point defect behavior with obtained electrical and optical properties. By a judicious combination of doping and annealing temperatures, materials with sub-picoseconds lifetimes and resistivity of ~ 1×107 ohm/square have been obtained. This is the highest resistivity reported to date for this material system.
Keywords :
III-V semiconductors; aluminium compounds; annealing; electrical resistivity; gallium arsenide; indium compounds; molecular beam epitaxial growth; point defects; semiconductor doping; semiconductor superlattices; terahertz wave detectors; terahertz wave generation; CW THz detection; CW THz generation; InGaAs-InAlAs; advanced MBE low temperature grown material; annealing temperature; doping temperature; electrical property; material system; optical property; Annealing; Conductivity; Doping; Gallium arsenide; Indium gallium arsenide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
ISSN :
1930-0395
Print_ISBN :
978-1-4244-9290-9
Type :
conf
DOI :
10.1109/ICSENS.2011.6127006
Filename :
6127006
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2966507
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