Title :
Fabrication and millimeter-wave characterization of semiconductor Klystron amplifier device
Author :
Iwahashi, Yohei ; Asada, Masahiro
Author_Institution :
Interdiscipl. Grad. Sch. of Sci.&Eng., Tokyo Inst. of Technol., Tokyo
Abstract :
As a possible terahertz amplifier device, Semiconductor Klystron Device was proposed. Theoretical analysis shows that the transconductance has a peak in the THz range. The frequency characteristics is measured in the millimeter wave range. Measured transconductance increases with frequency in agreement with theory.
Keywords :
optical klystrons; semiconductor optical amplifiers; submillimetre wave amplifiers; frequency characteristics; millimeter-wave characterization; semiconductor klystron amplifier device; terahertz amplifier device; transconductance; Electrons; Fabrication; Frequency measurement; HEMTs; Klystrons; Millimeter wave measurements; Millimeter wave technology; Semiconductor optical amplifiers; Submillimeter wave technology; Transconductance;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634541
