Title :
Evaluation of Si wire waveguide fabricated by parallel plate RIE process using double layered EB resist containing C60
Author :
Inoue, Keita ; Nishiyam, Nobuhiko ; Enomoto, Haruki ; Tamura, Shigeo ; Maruyama, Takeo ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo
Abstract :
By applying a double layered EB resist containing C60, we could form fine vertical shaped rectangular Si wire waveguide on silicon on insurator (SOI) by parallel plate reactive-ion-etching (RIE). The propagation loss of single-mode Si wire waveguide for TE mode was obtained to be 4.5 dB/cm at 1550 nm, which is the lowest value for those fabricated by parallel plate RIE.
Keywords :
integrated optics; optical fabrication; optical waveguides; silicon; silicon-on-insulator; sputter etching; wires; RIE; SOI; Si; double layered EB resist; parallel plate reactive-ion-etching; propagation loss; silicon-on-insurator; wire waveguide; Electrooptical waveguides; Optical devices; Optical refraction; Optical variables control; Optical waveguides; Propagation losses; Resists; Silicon; Tellurium; Wire;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634546
