DocumentCode :
2966652
Title :
Comparison of wafer bonding methods of membrane GaInAsP wired waveguides on Si substrate
Author :
Enomoto, Haruki ; Hai Duc Nguyen ; Inoue, Keita ; Sakamoto, Shinichi ; Okumura, Tadashi ; Nishiyama, Nobuhiko ; Kondo, Shimon ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Tech, Tokyo
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
289
Lastpage :
290
Abstract :
SiO2/SiO2 direct wafer bonding and BCB bonding have been compared to realize membrane GalnAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO2 direct bonding, respectively.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; membranes; optical waveguides; silicon compounds; wafer bonding; BCB; GaInAsP; Si; SiO2-SiO2; bonding strength; direct wafer bonding; low pressure bonding; membrane wired waveguides; Biomembranes; Circuits; Etching; High speed optical techniques; Indium phosphide; Interference; Optical waveguides; Silicon on insulator technology; Substrates; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634549
Filename :
4634549
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2966652
بازگشت