• DocumentCode
    2966652
  • Title

    Comparison of wafer bonding methods of membrane GaInAsP wired waveguides on Si substrate

  • Author

    Enomoto, Haruki ; Hai Duc Nguyen ; Inoue, Keita ; Sakamoto, Shinichi ; Okumura, Tadashi ; Nishiyama, Nobuhiko ; Kondo, Shimon ; Arai, Shigehisa

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Tech, Tokyo
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    289
  • Lastpage
    290
  • Abstract
    SiO2/SiO2 direct wafer bonding and BCB bonding have been compared to realize membrane GalnAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO2 direct bonding, respectively.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; membranes; optical waveguides; silicon compounds; wafer bonding; BCB; GaInAsP; Si; SiO2-SiO2; bonding strength; direct wafer bonding; low pressure bonding; membrane wired waveguides; Biomembranes; Circuits; Etching; High speed optical techniques; Indium phosphide; Interference; Optical waveguides; Silicon on insulator technology; Substrates; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634549
  • Filename
    4634549
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2966652