DocumentCode
2966671
Title
High-power vertical-cavity surface-emitting laser under pulsed operation
Author
Otake, Nobuyuki ; Yamada, Hitoshi ; Wado, Hiroyuki ; Abe, Katsunori ; Takeuchi, Yukihiro
Author_Institution
Res. Labs., DENSO Corp., Nisshin
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
293
Lastpage
294
Abstract
We have investigated InGaAs multiple-quantum-wells vertical-cavity surface-emitting laser (VCSEL) under high-power pulsed operation. The peak pulsed power of over 12.5 W has been achieved with the single VCSEL device which has five InGaAs quantum wells.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; InGaAs; high-power pulsed operation; multiple-quantum-well laser; pulsed power; vertical-cavity surface-emitting laser; Distributed Bragg reflectors; Electrodes; Gold; Indium gallium arsenide; Laser radar; Laser theory; Optical pulses; Power generation; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634550
Filename
4634550
Link To Document