DocumentCode :
2966671
Title :
High-power vertical-cavity surface-emitting laser under pulsed operation
Author :
Otake, Nobuyuki ; Yamada, Hitoshi ; Wado, Hiroyuki ; Abe, Katsunori ; Takeuchi, Yukihiro
Author_Institution :
Res. Labs., DENSO Corp., Nisshin
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
293
Lastpage :
294
Abstract :
We have investigated InGaAs multiple-quantum-wells vertical-cavity surface-emitting laser (VCSEL) under high-power pulsed operation. The peak pulsed power of over 12.5 W has been achieved with the single VCSEL device which has five InGaAs quantum wells.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; InGaAs; high-power pulsed operation; multiple-quantum-well laser; pulsed power; vertical-cavity surface-emitting laser; Distributed Bragg reflectors; Electrodes; Gold; Indium gallium arsenide; Laser radar; Laser theory; Optical pulses; Power generation; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634550
Filename :
4634550
Link To Document :
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