• DocumentCode
    2966677
  • Title

    Addressing high frequency effects in VLSI interconnects with full wave model and CFH

  • Author

    Achar, R. ; Nakhla, M.S. ; Zhang, Q.J.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
  • fYear
    1995
  • fDate
    5-9 Nov. 1995
  • Firstpage
    53
  • Lastpage
    56
  • Abstract
    In order to accurately characterize dispersive system of VLSI interconnects at higher frequencies, full wave analysis which takes into account all possible field components and satisfies all boundary conditions is required. However, conventional circuit simulation of interconnects with full wave models is extremely CPU expensive. This paper presents a new method to extend the moment matching technique, complex frequency hopping, to the case of interconnects modeled with full wave analysis. Formulation of circuit equations is modified to incorporate interconnect stencil from full wave analysis. A new algorithm for the moment generation for interconnect networks with full wave models has been developed. Full wave analysis has been carried out with the efficient ´spectral domain approach´. Results have shown that the proposed method is accurate while it yields a speed up of one to three orders of magnitude over conventional simulation techniques.
  • Keywords
    VLSI; circuit CAD; circuit analysis computing; high-frequency effects; integrated circuit interconnections; CFH; VLSI interconnects; boundary conditions; complex frequency hopping; dispersive system; full wave analysis; full wave model; high frequency effects; moment matching technique; spectral domain approach; Circuit simulation; Clocks; Couplings; Dispersion; Frequency; Integrated circuit interconnections; LAN interconnection; Nonlinear equations; Polynomials; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design, 1995. ICCAD-95. Digest of Technical Papers., 1995 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA, USA
  • ISSN
    1092-3152
  • Print_ISBN
    0-8186-8200-0
  • Type

    conf

  • DOI
    10.1109/ICCAD.1995.479990
  • Filename
    479990