Title :
A Silicon RFCMOS SOI Technology for Integrated Cellular/WLAN RF TX Modules
Author :
Costa, J. ; Carroll, M. ; Jorgenson, J. ; Mckay, T. ; Ivanov, T. ; Dinh, T. ; Kozuch, D. ; Remoundos, G. ; Kerr, D. ; Tombak, A. ; Mcmaken, J. ; Zybura, M.
Author_Institution :
RF Micro Devices, Greensboro
Abstract :
We describe the development of a novel RF CMOS thick silicon-on-insulator (SOI) technology built on high resistivity (1 kOmega-cm) silicon substrates. This technology provides a platform for cost-effective monolithic integration of several RF RF TX functions for cellular and WLAN RF system applications. The technology includes the integration of an RF power LDMOS transistor capable of nearly comparable linear and saturated RF power characteristics to GaAs solutions in the frequency range between 0.8 GHz-2.4 GHz. We present measured results of RF power devices in the cellular and WLAN bands, as well as characterization data of integrated antenna diversity switches, and integrated power management circuits.
Keywords :
CMOS integrated circuits; MMIC power amplifiers; UHF integrated circuits; cellular radio; field effect MMIC; radio transmitters; silicon-on-insulator; wireless LAN; RF CMOS SOI technology; RF power LDMOS transistor; RF transmitter modules; frequency 0.8 GHz to 2.4 GHz; high resistivity silicon substrates; integrated antenna diversity switches; integrated cellular/WLAN RF TX modules; integrated power management circuits; silicon-on-insulator; wireless LAN; Antenna measurements; CMOS technology; Conductivity; Gallium arsenide; Integrated circuit measurements; Monolithic integrated circuits; Power measurement; Radio frequency; Silicon on insulator technology; Wireless LAN; RF CMOS; SOI; TX modules; signal isolation; silicon power amplifiers; silicon switch; transmit modules;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380484
