1.8 dB insertion loss 200 GHz CPW band pass filter integrated in HR SOI CMOS Technology

Today, measurement of 65 nm CMOS [Dambrine, G., et al., 2005] and 130 nm-based SiGe HBTs [Chevalier, p. et al., 2004] technologies demonstrate both fT (current gain cut-off frequency) and fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100nm III-V HEMT. This increase allows new millimeter wave (MMW) applications on silicon. One of the success keys is then the passive integration. In this paper, on-chip coplanar waveguides (CPWs), which have been achieved in STMicroelectronics advanced nanometric RF CMOS High Resistivity (HR) SOI (rho > 1 kOmegaldrcm) process, and characterized up to 220 GHz are reported. Moreover, for the first time passive circuits working @ 220 GHz have been achieved and characterized demonstrating state-of-the-art performances and good agreement with electric simulations using developed models.