DocumentCode :
2966798
Title :
Manufacturable and Reliable 0.1 μm AlSb/InAs HEMT MMIC Technology for Ultra-Low Power Applications
Author :
Chou, Yeong-Chang ; Yang, Jeffrey M. ; Lin, Chun H. ; Lee, Jane ; Lange, M. ; Tsai, R. ; Nam, Peter ; Nishimoto, M. ; Gutierrez, Augusto ; Quach, Helen ; Lai, Richard ; Farkas, D. ; Wojtowicz, M. ; Chin, Patrick ; Barsky, Mike ; Oki, Aaron ; Boos, J. Brad
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
461
Lastpage :
464
Abstract :
This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation of conventional InAlAs/InGaAs/InP HEMTs. The uniform DC and RF performance of AlSb/InAs HEMTs have been demonstrated on 3-inch GaAs substrates. The further demonstration of reliable AlSb/InAs HEMT technology warrants the successful insertion of AlSb/InAs HEMT MMICs for military and space applications with ultra-low power requirements.
Keywords :
MMIC; power HEMT; HEMT MMIC technology; power dissipation; ultra-low power application; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; Power dissipation; Pulp manufacturing; Radio frequency; Space technology; HEMT; Low noise amplifier; MMIC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0687-0
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380488
Filename :
4263849
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2966798
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