Title :
Influence of the substrate orientation on the optical properties of InGaAs/GaAs heterostructures
Author :
Moser, Pascal ; Rojas-Ramirez, Juan-Salvador ; López-López, Máximo ; Goldhahn, Rüdiger
Author_Institution :
Inst. of Exp. Phys., Univ. Magdeburg, Magdeburg
Abstract :
The influence of the substrate orientation on the optical properties of InGaAs/GaAs quantum wells (QWpsilas) is studied in detail. Experimental data for the transition energies as obtained by photoluminescence (PL) and selective photoluminescence excitation spectroscopy (PLE) are compared to comprehensive theoretical calculations.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; InGaAs-GaAs; heterostructures; optical properties; photoluminescence; quantum wells; selective photoluminescence excitation spectroscopy; substrate orientation; transition energies; Capacitive sensors; Crystallization; Energy measurement; Gallium arsenide; Indium gallium arsenide; Optical films; Photoluminescence; Photonic band gap; Physics; Substrates;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634558
