DocumentCode
2966863
Title
Influence of the substrate orientation on the optical properties of InGaAs/GaAs heterostructures
Author
Moser, Pascal ; Rojas-Ramirez, Juan-Salvador ; López-López, Máximo ; Goldhahn, Rüdiger
Author_Institution
Inst. of Exp. Phys., Univ. Magdeburg, Magdeburg
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
311
Lastpage
312
Abstract
The influence of the substrate orientation on the optical properties of InGaAs/GaAs quantum wells (QWpsilas) is studied in detail. Experimental data for the transition energies as obtained by photoluminescence (PL) and selective photoluminescence excitation spectroscopy (PLE) are compared to comprehensive theoretical calculations.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; InGaAs-GaAs; heterostructures; optical properties; photoluminescence; quantum wells; selective photoluminescence excitation spectroscopy; substrate orientation; transition energies; Capacitive sensors; Crystallization; Energy measurement; Gallium arsenide; Indium gallium arsenide; Optical films; Photoluminescence; Photonic band gap; Physics; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634558
Filename
4634558
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