Title :
Subthreshold slope reduction of tunneling transistors through deformation potential engineering
Author :
Agarwal, Sapan ; Mazzeo, Giovanni ; Yablonovitch, Eli
Author_Institution :
Electr. Eng.& Comput. Sci. Dept., Univ. of California, Berkeley, CA
Abstract :
The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.
Keywords :
Ge-Si alloys; internal stresses; semiconductor materials; semiconductor superlattices; tunnel transistors; vibrations; SiGe; band edge energy; biaxial tensile strain; deformation potential engineering; silicon germanium superlattice; subthreshold slope reduction; thermal vibrations; tunneling transistors; Capacitive sensors; Equations; Germanium; MOSFETs; Photonic band gap; Power engineering and energy; Silicon; Tensile strain; Tunneling; Uniaxial strain;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634560
