DocumentCode :
2966898
Title :
A Single-Chip 25pJ/bit Multi-Gigabit 60GHz Receiver Module
Author :
Sarkar, Saikat ; Laskar, Joy
Author_Institution :
Georgia Inst. of Technol., Atlanta
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
475
Lastpage :
478
Abstract :
This paper presents the first single-chip 1.5 gigabit/s 60 GHz direct-conversion receiver. It consumes only 37 mW DC power (less than 25 pJ/bit) for a die size of only 3 mm times 1 mm. A three-stage front-end LNA, implemented in low-cost 0.15 mum silicon BiCMOS technology and utilizing a novel gain-boosting technique, shows a 24 dB measured gain with a 3.1 GHz 3-dB bandwidth with a DC power consumption of only 25 mW. A DC-biased-diode-based amplitude detector is integrated with the three-stage LNA in 3 mm times 1 mm for the direct down-conversion of the 60 GHz amplitude-modulated signal. The receiver chip is wire-bonded on a low-cost organic module with an integrated antenna. The measurement results show an excellent demodulation of 1.5 gigabit/s amplitude-modulated pseudo-random-binary-sequence up to a greater than 2 m distance from the transmitter. To the best knowledge of the authors, this fully integrated single chip (3 mm2) module solution, from antenna to demodulated baseband, exhibits the fastest transmitted data rate (1.5 Gbps) at the lowest power budget (25 pJ/bit) at 60 GHz reported till date.
Keywords :
BiCMOS integrated circuits; binary sequences; detector circuits; lead bonding; low noise amplifiers; millimetre wave amplifiers; millimetre wave receivers; random sequences; silicon; DC power consumption; DC-biased-diode-based amplitude detector; Si; amplitude-modulated signal; bandwidth 3.1 GHz; bit rate 1.5 Gbit/s; direct-conversion receiver; frequency 60 GHz; gain 24 dB; gain-boosting technique; low-cost organic module; millimetre wave amplifiers; millimetre wave receivers; power 25 mW; power 37 mW; pseudo-random-binary-sequence; receiver chip; receiver module; silicon BiCMOS technology; size 0.18 mum; size 1 mm; size 3 mm; three-stage front-end LNA; wire bonding; Antenna measurements; Bandwidth; BiCMOS integrated circuits; Detectors; Energy consumption; Gain measurement; Power measurement; Receiving antennas; Semiconductor device measurement; Silicon; 60GHz receiver; LNA; amplitude-detector; gain-boosting technique for millimeter-wave amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380510
Filename :
4263853
Link To Document :
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