Title :
Injection Type GaInAsP/InP DFB lasers directly bonded on SOI substrate
Author :
Yonezawa, Hidenori ; Maruyama, Takeo ; Okumura, Tadashi ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo
Abstract :
Injection type DFB lasers directly bonded on an SOI substrate were realized. A threshold current as low as 104 mA was obtained with a stripe width of 25 squarem and a cavity length of 1 mm.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; GaInAsP-InP; SOI substrate; cavity length; current 104 mA; direct bonding; injection type DFB lasers; size 1 mm; stripe width; threshold current; Bonding; Distributed feedback devices; Indium phosphide; Laser feedback; Optical feedback; Optical pumping; Silicon; Substrates; Threshold current; Waveguide lasers;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634566
