DocumentCode
2967198
Title
Increment of voltage gain of InP/InGaAs hot electron transistors controlled by insulated gate
Author
Saito, Hisashi ; Miyamoto, Yasuyuki ; Furuya, Kazuhito
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
355
Lastpage
356
Abstract
An insulated gate was introduced in hot electron transistors, in which hot electrons are propagated only in the intrinsic region after extraction from a heterostructure launcher. Voltage gain is increased by improved fabrication process.
Keywords
III-V semiconductors; gallium arsenide; hot electron transistors; indium compounds; insulated gate bipolar transistors; InP-InGaAs; heterostructure launcher; hot electron transistors; insulated gate; intrinsic region; voltage gain; Electrodes; Electrons; Fabrication; Indium gallium arsenide; Indium phosphide; Insulation; Transportation; Tungsten; Voltage control; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634575
Filename
4634575
Link To Document