Title :
Hierarcical strategy for quantification of NOx in a varying background of typical exhaust gases
Author :
Bur, Christian ; Schütze, Andreas ; Andersson, Mike ; Spetz, Anita Lloyd
Author_Institution :
Dept. of Mechatron., Saarland Univ., Saarbrücken, Germany
Abstract :
Silicon carbide based metal insulator field effect transistors (MISiC FET) with a catalytic gate metallization were used in temperature cycled operating mode (TCO) in order to improve the selectivity of the sensor. This approach obtaining multiple data from a single sensor, therefore known as a virtual multisensor, was originally developed for metal oxide sensors but earlier work proved the suitability for MISiC FETs as well. This strategy was now tailored to the quantification of NOx in a mixture of typical exhaust gases (CO, HC, plus NH3). Data was evaluated with multivariate statistics e.g. Linear Discriminant Analysis. In order to suppress the influence of varying background a hierarchical approach was used. Results show that quantification of NOx is possible even in a changing background.
Keywords :
field effect transistors; nitrogen compounds; semiconductor device metallisation; silicon compounds; wide band gap semiconductors; MISiC FET; NOx; SiC; catalytic gate metallization; hierarcical strategy; linear discriminant analysis; metal insulator field effect transistors; typical exhaust gases; virtual multisensor; FETs; Gas detectors; Gases; Logic gates; Silicon carbide; Temperature measurement; Temperature sensors;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6127046