DocumentCode
2967353
Title
AlN/ZnO/Si structure - a packageless solution for acoustic wave sensors
Author
Legrani, O. ; Elmazria, O. ; Pigeat, P. ; Bartasyte, A. ; Sarry, F. ; Zhgoon, S.
Author_Institution
Inst. Jean Lamour (IJL), Nancy Univ., Vandoeuvre lès Nancy, France
fYear
2011
fDate
28-31 Oct. 2011
Firstpage
492
Lastpage
495
Abstract
The possibility to create a packageless structure for acoustic wave sensors applications based on AlN/IDT/ZnO/Si structure is investigated. The effect of thicknesses of AlN and ZnO thin films on structure performance was calculated by two dimensional finite element method. Theoretical predictions were confirmed by in-situ measurements of frequency and insertion loss that were performed during deposition of AlN layer together with AlN film thickness monitoring by interferential reflectometry method.
Keywords
II-VI semiconductors; III-V semiconductors; aluminium compounds; finite element analysis; reflectometry; silicon; surface acoustic wave sensors; thickness measurement; zinc compounds; AlN-ZnO-Si; acoustic wave sensors; in-situ measurements; interferential reflectometry method; packageless solution; thickness monitoring; two dimensional finite element method; Acoustic waves; Couplings; Films; Performance evaluation; Silicon; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2011 IEEE
Conference_Location
Limerick
ISSN
1930-0395
Print_ISBN
978-1-4244-9290-9
Type
conf
DOI
10.1109/ICSENS.2011.6127047
Filename
6127047
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