A new nonlinear HEMT model allowing accurate simulation of very low IM3 levels for high-frequency highly linear amplifiers design

Today, confident design of highly linear MMICs is of primary concern for high-frequency applications. Unfortunately, at high frequencies and low output powers, accurate prediction of intermodulation distortions fails with most of the available HEMT models due to nonlinearity extractions based on CW S-parameter measurements at DC bias points or low RF frequency measurements. In this paper, we propose a suitable HEMT model, extracted from pulsed I/V and pulsed S-parameter measurements over a wide frequency range, which allows accurate prediction of intermodulation distortions at both high frequencies and large output power range.