A Drain-Lag Model for AlGaN/GaN Power HEMTs

A circuit modeling drain-lag effects has been added in a non-linear electrothermal model for AlGaN/GaN HEMTs. Modeling these trapping effects allows a better description of the I-V characteristics of measured devices as well as their large-signal characteristics. This drain-lag model is well suited to preserve the convergence capabilities and the simulation times of the non linear models of these devices. This paper presents our drain-lag modeling approach, the implementation of the model in CAD software, its operating mode, and also the parameters extraction from measurements. Then, significant comparison results will be reported on pulsed IV and large signal measurements with an AlGaN/GaN HEMT transistor.