Title :
Degradation-Mode Analysis for Highly Reliable GaN-HEMT
Author :
Inoue, Y. ; Masuda, S. ; Kanamura, M. ; Ohki, T. ; Makiyama, K. ; Okamoto, N. ; Imanishi, K. ; Kikkawa, T. ; Hara, N. ; Shigematsu, H. ; Joshin, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
Abstract :
We analyzed the degradation mode of GaN-HEMTs. We observed the sudden degradation to make serious influence on the reliability. In this paper, we proposed a new approach to eliminate sudden-degradation devices. By measuring the gate leakage current before stress test, we can predict the sudden degradation. We also discussed the gate leakage current factor, for example, the surface hexagonal pits. Using this eliminating method, we could select the reliable devices with a life of over 1 times 106 hours at high-temperature of 200degC.
Keywords :
gallium compounds; high electron mobility transistors; leakage currents; semiconductor device reliability; stress analysis; wide band gap semiconductors; GaN; degradation-mode analysis; gate leakage current factor; stress test; sudden degradation device; surface hexagonal pit; temperature 200 C; Aluminum gallium nitride; Current measurement; Degradation; Laboratories; Leakage current; Mobile handsets; Stress measurement; Temperature; Testing; Wireless LAN;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.379982
