Degradation-Mode Analysis for Highly Reliable GaN-HEMT

Author

Inoue, Y. ; Masuda, S. ; Kanamura, M. ; Ohki, T. ; Makiyama, K. ; Okamoto, N. ; Imanishi, K. ; Kikkawa, T. ; Hara, N. ; Shigematsu, H. ; Joshin, K.

Author_Institution

Fujitsu Labs. Ltd., Atsugi

fYear

2007

fDate

3-8 June 2007

Firstpage

639

Lastpage

642

Abstract

We analyzed the degradation mode of GaN-HEMTs. We observed the sudden degradation to make serious influence on the reliability. In this paper, we proposed a new approach to eliminate sudden-degradation devices. By measuring the gate leakage current before stress test, we can predict the sudden degradation. We also discussed the gate leakage current factor, for example, the surface hexagonal pits. Using this eliminating method, we could select the reliable devices with a life of over 1 times 10⁶ hours at high-temperature of 200degC.

Keywords

gallium compounds; high electron mobility transistors; leakage currents; semiconductor device reliability; stress analysis; wide band gap semiconductors; GaN; degradation-mode analysis; gate leakage current factor; stress test; sudden degradation device; surface hexagonal pit; temperature 200 C; Aluminum gallium nitride; Current measurement; Degradation; Laboratories; Leakage current; Mobile handsets; Stress measurement; Temperature; Testing; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.379982

Filename

4263897