A Fundamental VCO with Integrated Output Buffer beyond 120 GHz in SiGe Bipolar Technology

Author

Trotta, Saverio ; Knapp, Herbert ; Aufinger, Klaus ; Meister, Thomas F. ; Böck, Josef ; Simbürger, Werner ; Scholtz, Arpad L.

Author_Institution

Infineon Technol. AG, Munich

fYear

2007

fDate

3-8 June 2007

Firstpage

645

Lastpage

648

Abstract

A fundamental voltage controlled oscillator (VCO) beyond 120 GHz is presented. The VCO has been extended by a cascade amplifier as an output buffer. The chip is fabricated in a 200 GHz f_T SiGe bipolar technology. The VCO shows a tuning range from 117.5 to 121.5 GHz. A phase noise of -93.3 dBc/Hz at 1 MHz offset frequency was measured. The circuit consumes 310 mA from a -6 V supply. The high oscillation frequency with low phase noise performance, to the best authors´ knowledge, are record values for fully integrated fundamental voltage controlled oscillators in SiGe technology.

Keywords

Ge-Si alloys; bipolar MIMIC; millimetre wave amplifiers; millimetre wave oscillators; phase noise; voltage-controlled oscillators; SiGe; SiGe bipolar technology; cascade amplifier; current 310 mA; frequency 117.5 GHz to 121.5 GHz; frequency 200 MHz; fully integrated voltage controlled oscillator; integrated output buffer; phase noise performance; voltage 6 V; Circuit optimization; Frequency measurement; Germanium silicon alloys; Integrated circuit technology; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators; SiGe; VCO; heterojunction bipolar transistor; millimeter-wave circuits; voltage controlled oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.379984

Filename

4263899