• DocumentCode
    2967723
  • Title

    Fundamental W-Band InP DHBT-Based VCOs With Low Phase Noise and Wide Tuning Range

  • Author

    Makon, R.E. ; Driad, R. ; Schneider, K. ; Aidam, R. ; Schlechtweg, M. ; Weimann, G.

  • Author_Institution
    Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg
  • fYear
    2007
  • fDate
    3-8 June 2007
  • Firstpage
    649
  • Lastpage
    652
  • Abstract
    In this paper, fundamental W-band voltage controlled oscillators (VCOs) featuring low phase noise and wide tuning range are reported. These monolithically integrated circuits (ICs) are fabricated using an InP/InGaAs DHBT technology, exhibiting cut-off frequency values of more than 250 GHz for both fT and fmax. The VCOs in differential topology consist of an oscillator core according to the negative resistance type and an ac-coupled output buffer. A first VCO version features operation frequencies ranging between 88 GHz and 100 GHz. Within this tuning range, phase noise values down to -90 dBc/Hz have been achieved at 1 MHz offset frequency, while single-ended output power values up to +4 dBm were measured, resulting in a total signal power of +7 dBm. A second VCO version shows operation frequencies between 101 GHz and 109 GHz. Within this frequency operation interval, phase noise values down to -88 dBc/Hz have been achieved at 1 MHz offset frequency, while a single-ended output power up to +2 dBm was measured, i.e. a total available signal power of +5 dBm.
  • Keywords
    gallium arsenide; heterojunction bipolar transistors; indium compounds; monolithic integrated circuits; voltage-controlled oscillators; InP-InGaAs DHBT technology; W-band InP DHBT-based VCO; double heterojunction bipolar transistor; frequency 101 GHz to 109 GHz; frequency 88 GHz to 100 GHz; monolithically integrated circuit; tuning range; voltage controlled oscillator; Circuit optimization; DH-HEMTs; Frequency measurement; Indium phosphide; Noise measurement; Phase noise; Power generation; Power measurement; Tuning; Voltage-controlled oscillators; InP DHBT; output power; phase noise; tuning range; voltage controlled oscillator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 2007. IEEE/MTT-S International
  • Conference_Location
    Honolulu, HI
  • ISSN
    0149-645X
  • Print_ISBN
    1-4244-0688-9
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2007.379985
  • Filename
    4263900