DocumentCode :
296776
Title :
SAW amplifiers on multilayer GaAs substrates
Author :
Cameron, Thomas P. ; Hunt, William D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
1
fYear :
1995
fDate :
7-10 Nov 1995
Firstpage :
349
Abstract :
The SAW amplifier was a topic of considerable interest twenty years ago and in light of numerous material advances in compound semiconductors since that time, perhaps should be revisited. One of the limitations of this device was the excessive power consumption due to the inability to grow very high resistivity semiconductor films with high electron mobility. In addition, the high drift voltages on the order of hundreds of volts made the devices impractical for commercial system applications. In this paper we implement a SAW amplifier on a multilayer GaAs substrate. Fabricating the device on a thin (<1 μm), lightly doped n-type (n0~1014) epitaxial layer of GaAs enables a very high sheet resistance to be obtained while maintaining the high electron mobility of GaAs
Keywords :
acoustic wave amplification; acoustoelectric transducers; gallium arsenide; interdigital transducers; power consumption; surface acoustic wave transducers; 1 micron; GaAs; IDT; SAW amplifiers; acoustoelectric amplifier; excessive power consumption; high drift voltages; interdigitated arrays; lightly doped n-type epilayer; low voltage amplifier; multilayer substrates; segmented structure; very high sheet resistance; Conductivity; Electron mobility; Energy consumption; Gallium arsenide; Nonhomogeneous media; Semiconductor films; Semiconductor materials; Semiconductor optical amplifiers; Substrates; Surface acoustic waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE
Conference_Location :
Seattle, WA
ISSN :
1051-0117
Print_ISBN :
0-7803-2940-6
Type :
conf
DOI :
10.1109/ULTSYM.1995.495596
Filename :
495596
Link To Document :
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