An X-Band Low Noise InP-HBT VCO with Separate Optimized Varactor Layers

Author

Magrisso, T. ; Elad, D. ; Buadana, N. ; Kraus, S. ; Elias, D. Cohen ; Gavrilov, A. ; Cohen, S. ; Ritter, D.

Author_Institution

Armament Dev. Authority Ltd., Haifa

fYear

2007

fDate

3-8 June 2007

Firstpage

661

Lastpage

664

Abstract

A Colpitts 8 GHz InP heterojunction bipolar transistor (HBT) monolithic voltage controlled oscillator (VCO) with separate varactor layers is presented. The separate and optimized varactor layers were grown underneath the transistor layers. A broad tuning range of 12%, low phase noise of -94 dBc/Hz at 100 KHz offset frequency, and high linearity of 2% were demonstrated. The VCO power consumption was 30 mW while providing -3 dBm output power. The over all chip size is 1.3times0.8 mm².

Keywords

III-V semiconductors; bipolar transistor circuits; circuit tuning; indium compounds; microwave oscillators; phase noise; varactors; voltage-controlled oscillators; InP; InP heterojunction bipolar transistor monolithic voltage controlled oscillator; InP-HBT VCO; X-band low noise VCO; frequency 8 GHz; phase noise; power 30 mW; power consumption; varactor layers; Energy consumption; Frequency; Heterojunction bipolar transistors; Indium phosphide; Linearity; Phase noise; Power generation; Tuning; Varactors; Voltage-controlled oscillators; Heterojunction bipolar transistor (HBT); InP; monolithic microwave integrated circuit (MMIC); oscillator; varactor; voltage-controlled oscillator (VCO);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380006

Filename

4263903