Title :
Characterization of SAW devices up to 2.6 GHz on GaAs and InP
Author :
Irby, J. Houston ; Hunt, William D. ; Corless, Ric F.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The fabrication and electrical characterization of submicron GHz-range SAW devices on (001)-cut GaAs and InP substrates is reported. Single-electrode unapodized unmatched IDTs with 0.25, 0.5, 0.75, and 1 μm electrode widths were written by a JEOL JBX-5FE 50 kV electron-beam lithography system. Experimental values of the piezoelectric coupling coefficient, K2, and the equivalent substrate dielectric constant, K2, were extracted from one-port admittance data using 6 mil pitch coplanar waveguide probes; these values were slightly higher than theoretical values. A SAW attenuation, a, of 1.62×10-2 dβ/μm and an insertion loss of 49 dB was found using two-port time-gated measurements of 2.6 GHz unmatched IDT delay lines on GaAs. The devices on InP operated up to 1.35 GHz
Keywords :
III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; interdigital transducers; permittivity; surface acoustic wave delay lines; 0.25 to 1 micron; 1.35 GHz; 2.6 GHz; 49 dB; GaAs; InP; SAW attenuation; SAW devices; coplanar waveguide probes; electrical characterization; electrode widths; electron-beam lithography system; equivalent substrate dielectric constant; fabrication; insertion loss; one-port admittance data; piezoelectric coupling coefficient; single-electrode unapodized unmatched IDTs; two-port time-gated measurements; unmatched IDT delay lines; Admittance; Data mining; Dielectric constant; Dielectric substrates; Electrodes; Fabrication; Gallium arsenide; Indium phosphide; Lithography; Surface acoustic wave devices;
Conference_Titel :
Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2940-6
DOI :
10.1109/ULTSYM.1995.495606
