Title :
Dimensionless parameters of reactive ion etching
Author :
McCafferty, Robert H.
Author_Institution :
IBM Gen. Technol. Div., Essex Junction, VT, USA
Abstract :
The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding the interrelationship of parameters in plasma-driven etching reactions are outlined, and the theory underlying the derivation itself is given
Keywords :
semiconductor device manufacture; semiconductor technology; sputter etching; RIE; dimensionless parameters; plasma-driven etching reactions; reactive ion etching; semiconductor manufacturing process; Etching; Logic circuits; Logic gates; Manufacturing processes; Plasma applications; Process control; Radio frequency; Response surface methodology; Silicon; Substrates;
Conference_Titel :
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location :
Houston, TX
DOI :
10.1109/ECC.1989.77835
