A MEMS pressure sensor based on Hall effect

This paper reports a microfabricated pressure sensor based on the Hall effect. A special structure is designed to characterize the pressure with a Hall voltage. To describe the properties of the devise an electromagnetism model and a mechanical model is developed. The sensor is tested under the pressure ranges from 300 hPa to 1100 hPa. The results show that the output voltage is linear to the pressure and the sensitivity is 0.0288 mV/hPa. As other Hall devices, an offset voltage exists without application of a magnetic field and it changes with the pressure as well. But compared with the Hall voltage, the offset voltage is much smaller.