DocumentCode :
2967976
Title :
A novel approach for achieving bulk silicon MEMS on CMOS substrate by Au-Au bonding
Author :
Cai, Chun-Hua ; Qin, Ming
Author_Institution :
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
fYear :
2011
fDate :
28-31 Oct. 2011
Firstpage :
1518
Lastpage :
1521
Abstract :
This paper presents a new approach for achieving single-crystal silicon MEMS on CMOS substrate. Through this technology, High-performance bulk-Si MEMS sensors are merged with the integrated circuit (IC) technology. Also, substrate isolation and electrical interconnection between the CMOS circuits and MEMS sensors are achieved perfectly. In applications, the pressure sensor and electrothermal actuator have been realized and monolithic integrated using this approach. The measurement results show that sensitivities of the pressure sensor and the electrothermal actuator are 0.29fF/hPa, and 19.6μm/V, respectively. The measurement ranges are 450-1010hPa, and 1.8-2.7V, respectively.
Keywords :
CMOS integrated circuits; elemental semiconductors; gold; micromechanical devices; silicon; Au-Au; CMOS circuits; IC; Si; bulk MEMS; electrothermal actuator; integrated circuit technology; pressure 450 hPa to 1010 hPa; pressure sensor; Actuators; CMOS integrated circuits; Capacitive sensors; Glass; Micromechanical devices; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
ISSN :
1930-0395
Print_ISBN :
978-1-4244-9290-9
Type :
conf
DOI :
10.1109/ICSENS.2011.6127078
Filename :
6127078
Link To Document :
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