A novel approach for achieving bulk silicon MEMS on CMOS substrate by Au-Au bonding

This paper presents a new approach for achieving single-crystal silicon MEMS on CMOS substrate. Through this technology, High-performance bulk-Si MEMS sensors are merged with the integrated circuit (IC) technology. Also, substrate isolation and electrical interconnection between the CMOS circuits and MEMS sensors are achieved perfectly. In applications, the pressure sensor and electrothermal actuator have been realized and monolithic integrated using this approach. The measurement results show that sensitivities of the pressure sensor and the electrothermal actuator are 0.29fF/hPa, and 19.6μm/V, respectively. The measurement ranges are 450-1010hPa, and 1.8-2.7V, respectively.