The low power 3D-magnetotransistor based on CMOS technology

Author

Leepattarapongpan, Chana ; Phetchakul, Toempong ; Penpondee, Naritchaphan ; Pengpad, Puttapon ; Srihapat, Arckom ; Chaowicharat, Ekalak ; Hruanun, Charndet ; Poyai, Amporn

Author_Institution

Thai Microelectron. Center, Nat. Electron. & Comput. Technol. Center, Chachoengsao, Thailand

fYear

2011

fDate

28-31 Oct. 2011

Firstpage

500

Lastpage

503

Abstract

This article presents a 3D magnetotransistor for detecting magnetic field in three dimensions (B_X, B_Y, and B_Z) by relying on the difference between base and collector currents (ΔI_CB). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and BZ direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.05, 0.07 and 0.145 mV/mT, respectively.

Keywords

MOSFET; low-power electronics; magnetic devices; magnetic field measurement; magnetic sensors; CMOS fabrication technology; LOCOS oxide; collector current; current 0.2 mA; low biasing current; low power 3D-magnetotransistor; magnetic field detection; Equations; Magnetic sensors; Magnetic separation; Mathematical model; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2011 IEEE

Conference_Location

Limerick

ISSN

1930-0395

Print_ISBN

978-1-4244-9290-9

Type

conf

DOI

10.1109/ICSENS.2011.6127079

Filename

6127079