DocumentCode :
2968141
Title :
Static and dynamic testing of power MOSFETs
Author :
Galyon, G.T. ; Cardinal, J. ; Singh, PJ ; Newcomer, J. ; Lorenz, W. ; Chu, K.
Author_Institution :
Server Group, IBM Corp., Poughkeepsie, NY, USA
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
230
Abstract :
Laboratory efforts to duplicate power MOSFET service failures in a controlled, short term laboratory experiment have largely been without success. Experimentation in this laboratory have established tests, both static and dynamic, that reproduce long term service type failures in a short term test. This paper describes these test results and comments on the resultant reliability improvements
Keywords :
dynamic testing; power MOSFET; semiconductor device reliability; semiconductor device testing; dynamic short circuit testing; dynamic testing; long term service type failures; power MOSFET; reliability improvements; reverse recovery testing; short term test; static reverse bias testing; static testing; Circuit breakers; Circuit testing; Clamps; Failure analysis; Laboratories; MOSFETs; Packaging; Power systems; Pulse width modulation converters; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-6618-2
Type :
conf
DOI :
10.1109/APEC.2001.911653
Filename :
911653
Link To Document :
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