مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

2968366

Title :

WE3G: Linear Device Modelling

fYear :

2007

fDate :

3-8 June 2007

Firstpage :

781

Lastpage :

781

Keywords :

Circuits; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; PHEMTs; Physics;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location :

Honolulu, HI, USA

ISSN :

0149-645X

Print_ISBN :

1-4244-0688-9

Electronic_ISBN :

0149-645X

Type :

conf

DOI :

10.1109/MWSYM.2007.380056

Filename :

4263935

Link To Document :