DocumentCode
2968517
Title
A high pulsed power frequency doubler to 190 GHz
Author
Porterfield, D. ; Crowe, T. ; Bishop, W. ; Kurtz, D. ; Grossman, E.
Author_Institution
Virginia Diodes, Inc., Charlottesville, VA, USA
Volume
1
fYear
2005
fDate
19-23 Sept. 2005
Firstpage
78
Abstract
A high-pulsed-power varactor doubler has been developed to efficiently transfer the power from a pulsed 95 GHz IMPATT oscillator to the 190 GHz band. The frequency doubler uses waveguide based embedding structures employing high-thermal conductivity circuits and Virginia Diodes, Inc. (VDI) proprietary GaAs Schottky varactor diode technology. The embedding circuitry is based on a balanced doubler topology that delivers state-of-the-art power and fixed-tuned bandwidth at millimeter-wave frequencies. The waveguide structure is modified to provide ample room for the large diode arrays while simultaneously blocking propagation of the unwanted TM modes. Special attention was given to maximizing the heat conduction pathways in the embedding structure to minimize heating of the varactor devices.
Keywords
III-V semiconductors; IMPATT oscillators; MMIC frequency convertors; Schottky diodes; frequency multipliers; gallium arsenide; varactors; 190 GHz; 95 GHz; GaAs; IMPATT oscillator; Schottky varactor diode; balanced doubler topology; diode arrays; embedded circuit; frequency doubler; heat conduction pathways; high-pulsed-power varactor doubler; high-thermal conductivity circuits; millimeter wave frequencies; Bandwidth; Circuit topology; Conductivity; Frequency; Gallium arsenide; Millimeter wave circuits; Millimeter wave technology; Oscillators; Schottky diodes; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN
0-7803-9348-1
Type
conf
DOI
10.1109/ICIMW.2005.1572415
Filename
1572415
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