Title :
Simulation of active circuit survivability
Author :
Wiederspahn, Lee ; Chung, Kirby ; Canyon, Jim
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A new method has been developed to predict survivability thresholds of HEMT active devices under large RF drive. HEMT MMIC circuit survivability levels have been accurately determined for a 6-9 and a 9-18 GHz LNA
Keywords :
HEMT integrated circuits; active networks; circuit analysis computing; failure analysis; field effect MMIC; integrated circuit modelling; integrated circuit reliability; reliability theory; 6 to 9 GHz; 9 to 18 GHz; HEMT active devices; LNA; RF drive; SPICE; active circuit survivability; damage threshold; model; signal simulation; Avalanche breakdown; Circuit simulation; Circuit testing; Diodes; HEMTs; MESFETs; Predictive models; Radio frequency; Tunneling; Voltage;
Conference_Titel :
Aerospace Applications Conference, 1996. Proceedings., 1996 IEEE
Conference_Location :
Aspen, CO
Print_ISBN :
0-7803-3196-6
DOI :
10.1109/AERO.1996.495900
