DocumentCode :
2968828
Title :
Single crystal FBAR with LiNbO3 and LiTaO3 piezoelectric substance layers
Author :
Osugi, Yukihisa ; Yoshino, Takashi ; Suzuki, Kenji ; Hirai, Takami
Author_Institution :
NGK Insulators, Ltd., Nagoya
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
873
Lastpage :
876
Abstract :
The film bulk acoustic resonator (hereinafter referred to as FBAR) has been proposed for use as a high performance filter. FBAR consists of an acoustic resonator through use of a thin film deposition process. On the other hand, single crystals have been widely utilized as material for resonators due to their material uniformity, low material defect rates, and high material stability. The use of a single crystal to achieve a high frequency resonator will further expand FBAR´s application ranges. In this paper, we present single crystal FBAR that is characterized by low loss and high bandwidth. Additionally, this device has the following features: the capability to fabricate a single crystal acoustic resonator through the use of single crystal micro processing technology, such as a single crystal wafer junction, polishing, and etching; and the capability of a wide range of desired filter bandwidths, each able to secure an ample amount of high performance characteristics by varying the single crystal´s type and direction. LiNbO3 (LN) and LiTaO3 (LT), each with the large electromechanical coupling factor kt2, are used for the single crystal. 3-inch full-wafer processing is performed, thereby yielding superior uniformity resonators.
Keywords :
acoustic resonators; bulk acoustic wave devices; coating techniques; crystal filters; crystal resonators; lithium compounds; LiNbO3; LiTaO3; crystal acoustic resonator; electromechanical coupling; film bulk acoustic resonator; high performance filter; material defect rates; material stability; material uniformity; piezoelectric substance layers; single crystal FBAR; thin film deposition; wafer processing; Acoustic devices; Bandwidth; Crystalline materials; Crystals; Etching; Film bulk acoustic resonators; Resonant frequency; Resonator filters; Sputtering; Stability; Bulk acoustic wave device; crystals; microresonators; piezoelectric resonator filters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380118
Filename :
4263960
Link To Document :
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