Title :
PECVD SiC photonic crystal sensor
Author :
Pandraud, G. ; Huang, Y. ; Sarro, P.M. ; Arango, F. Bernal
Author_Institution :
DIMES-ECTM, Delft Univ. of Technol., Delft, Netherlands
Abstract :
We demonstrate a two-dimensional photonic crystal made of PECVD silicon carbide (SiC) at near-infrared wavelengths. Although the refractive index of SiC is lower than that of a conventional semiconductor such as GaAs or Si, we show that photonic crystals based sensors can be obtained in PECVD SiC. We fabricated photonic crystals experimentally having bandgaps of 200 nm, and estimated their sensitivity to 210 nm/Refractive Index Unit.
Keywords :
optical sensors; photonic band gap; photonic crystals; refractive index; semiconductor devices; silicon compounds; SiC; bandgaps; conventional semiconductor; near-infrared wavelengths; refractive index; sensitivity; size 200 nm; two-dimensional photonic crystal; Etching; Optical waveguides; Photonic band gap; Refractive index; Silicon; Silicon carbide;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6127130
