• DocumentCode
    2969383
  • Title

    Structural properties of nanorod zinc oxide thin films on Si substrate deposited by RF magnetron sputtering at room temperature

  • Author

    Shafura, A.K. ; Md Sin, N.D. ; Mamat, M.H. ; Uzer, M. ; Mohamad, A. ; Rusop, M.

  • Author_Institution
    NANO-EleTronic Centre, Univ. Teknol. MARA, Shah Alam, Malaysia
  • fYear
    2013
  • fDate
    25-27 Nov. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Nanorod zinc oxide (ZnO) thin films have been successfully deposited using RF magnetron sputtering at room temperature. The RF power was varied and the effect on the surface characteristic of ZnO thin film was studied. The surface topography and morphology of the thin films were characterised using X-ray Diffractometer (XRD), Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The paper reveals the effect of RF power on the surface characteristic of ZnO thin film. The films deposited at a RF power of 250 W exhibited the best structural properties with good surface morphology.
  • Keywords
    II-VI semiconductors; X-ray diffraction; atomic force microscopy; field emission electron microscopy; nanofabrication; nanorods; scanning electron microscopy; semiconductor growth; semiconductor thin films; sputter deposition; surface morphology; surface topography; wide band gap semiconductors; zinc compounds; AFM; FESEM; RF magnetron sputtering deposition; RF power; Si; Si substrate; X-ray diffractometer; XRD; ZnO; atomic force microscopy; field emission scanning electron microscopy; nanorod zinc oxide thin films; power 250 W; structural properties; surface characteristics; surface morphology; surface topography; temperature 293 K to 298 K; Films; Radio frequency; Silicon; Sputtering; Substrates; Surface morphology; Zinc oxide; RF magnetron sputtering; nanorod zinc oxide RF power; structural properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Smart Instrumentation, Measurement and Applications (ICSIMA), 2013 IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4799-0842-4
  • Type

    conf

  • DOI
    10.1109/ICSIMA.2013.6717947
  • Filename
    6717947