• DocumentCode
    2969640
  • Title

    A low power memory cell design for SEU protection against radiation effects

  • Author

    Shiyanovskii, Yuriy ; Rajendran, Aravind ; Papachristou, Chris

  • Author_Institution
    Case Western Reserve Univ., Cleveland, OH, USA
  • fYear
    2012
  • fDate
    25-28 June 2012
  • Firstpage
    288
  • Lastpage
    295
  • Abstract
    This paper presents a novel soft error tolerant SRAM cell design based on the concept of partial functional component separation. The design consists of an inner core for data storage, and outer core for data protection and a separate read port. This SRAM cell provides a high level of soft error tolerance with a rather low power consumption penalty in comparison with other hardened SRAM designs. The design was optimized for power consumption, write performance, read stability, and soft error tolerance by selectively varying the physical dimensions of the cores. Temperature dependence and impact of voltage scaling were analyzed for the optimized design.
  • Keywords
    SRAM chips; integrated circuit design; low-power electronics; radiation effects; SEU protection; data protection; data storage; low power consumption penalty; low power memory cell design; partial functional component separation; radiation effects; read port; read stability; single event upset; soft error tolerance; soft error tolerant SRAM cell design; temperature dependence; voltage scaling impact; write performance; Inverters; MOSFETs; Modulation; Power demand; Random access memory; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Adaptive Hardware and Systems (AHS), 2012 NASA/ESA Conference on
  • Conference_Location
    Erlangen
  • Print_ISBN
    978-1-4673-1915-7
  • Electronic_ISBN
    978-1-4673-1914-0
  • Type

    conf

  • DOI
    10.1109/AHS.2012.6268665
  • Filename
    6268665