DocumentCode :
2969713
Title :
0.25μm CMOS Dual Feedback Wide-Band UHF Low Noise Amplifier
Author :
Lo, Ivy ; Boric-Lubecke, Olga ; Lubecke, Victor
Author_Institution :
Hawaii Univ., Honolulu
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
1059
Lastpage :
1062
Abstract :
This paper presents a CMOS low noise amplifier (LNA) for UHF band applications. By using an inverter to enhance the overall transconductance, and a resistive shunt feedback topology with a source degenerated inductor, a wide bandwidth from 50 MHz to 560 MHz is achieved, with a peak power gain of 13.8 dB. A noise figure of 1.8 to 2.4 dB is obtained in the frequency range of 200 MHz and 1.5 GHz. At 450 MHz, this LNA exhibits IIP3 of 6.15 dBm, and input P1dB of -6 dBm. The LNA is biased at 2.4 V, drawing a current of 14 mA. Compared to other published wide-band LNAs, this amplifier achieves the best linearity for NF below 2.5 dB, with low circuit complexity.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; invertors; low noise amplifiers; CMOS dual feedback low noise amplifier; bandwidth 50 MHz to 560 MHz; current 14 mA; gain 13.8 dB; inverter; noise figure 1.8 dB to 2.4 dB; resistive shunt feedback topology; size 0.25 μm; source degenerated inductor; transconductance; voltage 2.4 V; wide-band UHF low noise amplifier; Bandwidth; Broadband amplifiers; Feedback; Gain; Inductors; Inverters; Low-noise amplifiers; Shunt (electrical); Topology; Transconductance; CMOS; UHF; feedback; high linearity; low noise amplifiers; wide-band;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0687-0
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380275
Filename :
4264009
Link To Document :
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