Title :
20-Watt LDMOS Power Amplifier IC for Linear Driver Application
Author :
Bagger, Reza ; Andersson, Paul ; Shin, C.D.
Author_Institution :
Infineon Technol. Nordic AB, Kista
Abstract :
This paper describes an LDMOS power amplifier integrated circuit for W-CDMA applications. The IC was developed with Infineon´s Si LDMOS IC technology. The PA IC achieved 28.5 dB gain. When tuned for W-CDMA the IC showed 20 W PEP at IM3 = -30 dBc (two-tone), 400-MHz bandwidth (20%) around 2100 MHz, gain flatness of 0.15 dB/30 MHz, and phase flatness of 1 degree/30 MHz. The PA IC was characterized under all typical modulation formats, and is included in Infineon´s product portfolio of power ICs for radio base stations.
Keywords :
MOS analogue integrated circuits; circuit tuning; code division multiple access; driver circuits; power amplifiers; Infineon product; LDMOS power amplifier IC; W-CDMA application; bandwidth 400 MHz; circuit tuning; gain 28.5 dB; lateral diffused metal-oxide semiconductor; linear driver application; modulation formats; power 20 W; radio base stations; Application specific integrated circuits; Bandwidth; Driver circuits; Gain; Integrated circuit technology; Modulation; Multiaccess communication; Portfolios; Power amplifiers; Power integrated circuits; Broadband; Driver; IC; LDMOS; Power amplifier; W-CDMA;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380279
