Title :
A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE
Author :
Meliani, Chafik ; Rudolph, M. ; Kurpas, Paul ; Schmidt, L. ; Rheinfelder, C.N. ; Heinrich, W.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Abstract :
A class-E amplifier in the 2 GHz band is presented. It is realized as a coplanar MMIC using a high-voltage GaAs-HBT process. At 37 dBm output power, a high PAE of 65% with 71% collector efficiency are achieved. The gain of the amplifier in the switch-mode region reaches 11 dB. These are very competitive values for PAE, collector efficiency, and output power and the highest ones using GaAs-HBT technology. The measured data is supported by in-depth circuit simulation results highlighting the special conditions and requirements of switch-mode operation.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF amplifiers; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; GaAs; HBT class-E MMIC amplifier; PAE; amplifier gain; coplanar MMIC; frequency 2.4 GHz; in-depth circuit simulation; switch-mode operation; Circuit simulation; Circuit synthesis; Electrical resistance measurement; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Switching circuits; GaAs; HBT; PAE; class-E; power amplifier;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380282
