DocumentCode :
2970004
Title :
Analogue Dynamic Supply Voltage L-band GaN High Power Amplifier with Improvement of Efficiency and Linearity
Author :
Matsunaga, Kohji ; Tanomura, Masahiro ; Nakayama, Tatsuo ; Ando, Yuji ; Miyamoto, Hironobu ; Shimawaki, Hidenori
Author_Institution :
NEC Corp., Otsu
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
1107
Lastpage :
1110
Abstract :
This paper describes an analogue dynamic gate supply voltage L-band 10W GaN power amplifier which can provide improved efficiency and linearity for two tone and WCDMA signals. The developed analogue dynamic supply voltage method employs an envelope detector and a high speed low power dissipation CMOS level shift converter. The dynamic gate supply voltage is adjusted with the instantaneous input power. This simple method achieved a 6dB reduction in IM3 at 30dBm and 10% improvement of drain efficiency at IM3 of -20dBc.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; code division multiple access; gallium compounds; low-power electronics; wide band gap semiconductors; CMOS level shift converter; GaN; L-band; UHF; WCDMA; analogue dynamic supply voltage; efficiency improvement; envelope detector; high power amplifier; linearity improvement; power 10 W; Envelope detectors; FETs; Gallium nitride; High power amplifiers; L-band; Linearity; Power amplifiers; RF signals; Radiofrequency amplifiers; Voltage; GaN; analogue dynamic voltage; efficiency; linearity; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380287
Filename :
4264021
Link To Document :
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