A 2.5 Watt 3.3-3.9 GHz Power Amplifier for WiMAX Applications using a GaN HEMT in a Small Surface-Mount Package

Author

Crescenzi, E. James, Jr. ; Wood, Simon M. ; Prejs, Arthur ; Pengelly, Raymond S. ; Pribble, William

fYear

2007

fDate

3-8 June 2007

Firstpage

1111

Lastpage

1114

Abstract

A 2.5 watt average power (15 watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power in very small (3times3 mm) surface-mount packages. The PA produces 12.5 dB of gain over 3.3-3.9 GHz, with EVM under 2.5% with 2.5 watts average output. A design methodology for optimizing performance for the WiMAX protocol is presented.

Keywords

WiMax; gallium compounds; high electron mobility transistors; microwave power amplifiers; surface mount technology; wide band gap semiconductors; GaN; GaN HEMT; WiMAX signal protocol; frequency 3.3 GHz to 3.9 GHz; gain 12.5 dB; power 15 W; power 2.5 W; power amplifier; surface-mount package; Costs; Gallium nitride; HEMTs; Packaging; Power amplifiers; Printed circuits; Protocols; Thermal conductivity; Thermal resistance; WiMAX; Gallium Nitride HEMT; Power amplifier; WiMAX; surface-mount package;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380288

Filename

4264022