Title :
A 2.5 Watt 3.3-3.9 GHz Power Amplifier for WiMAX Applications using a GaN HEMT in a Small Surface-Mount Package
Author :
Crescenzi, E. James, Jr. ; Wood, Simon M. ; Prejs, Arthur ; Pengelly, Raymond S. ; Pribble, William
Abstract :
A 2.5 watt average power (15 watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power in very small (3times3 mm) surface-mount packages. The PA produces 12.5 dB of gain over 3.3-3.9 GHz, with EVM under 2.5% with 2.5 watts average output. A design methodology for optimizing performance for the WiMAX protocol is presented.
Keywords :
WiMax; gallium compounds; high electron mobility transistors; microwave power amplifiers; surface mount technology; wide band gap semiconductors; GaN; GaN HEMT; WiMAX signal protocol; frequency 3.3 GHz to 3.9 GHz; gain 12.5 dB; power 15 W; power 2.5 W; power amplifier; surface-mount package; Costs; Gallium nitride; HEMTs; Packaging; Power amplifiers; Printed circuits; Protocols; Thermal conductivity; Thermal resistance; WiMAX; Gallium Nitride HEMT; Power amplifier; WiMAX; surface-mount package;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380288
