Title :
Reliability studies on sub 100 nm SOI-MNSFETs
Author :
Mahapatra, S. ; Rao, V. Ramgopal ; Vasi, J. ; Cheng, B. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India
Abstract :
SOI MNSFETs with channel lengths down to 100 nm and having a Jet Vapor Deposited (JVD) silicon nitride (Si3N4) gate dielectric are fabricated and characterized. The JVD MNSFETs show comparable performance in comparison to conventional SiO2 SOI-MOSFETs, in terms of low gate leakage, Si3N4/Si interface quality and Ion/I off ratio. In addition, the MNSFETs show better hot carrier reliability compared to conventional MOSFETs. Our results explore the worthiness of JVD Si3N4 as gate dielectric for future low power ULSI applications
Keywords :
MISFET; hot carriers; low-power electronics; semiconductor device reliability; silicon compounds; silicon-on-insulator; vapour deposited coatings; 100 nm; SOI-MNSFET; Si-Si3N4; hot carrier reliability; interface quality; jet vapor deposition; leakage current; low power ULSI; on/off ratio; silicon nitride gate dielectric; Capacitance; Dielectrics and electrical insulation; Electric variables measurement; Electrical resistance measurement; Gate leakage; Hot carriers; MOSFETs; Silicon; Thickness measurement; Transconductance;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911895
