Title :
Plasma-induced-damage (PID) free 29A nitrided gate oxide of 130 nm CMOS devices for high performance microprocessor manufacturing
Author :
Klein, G. ; Nariman, H. ; Wu, D. ; Tao, J. ; Bandyopadhyay, B. ; Wristers, D. ; Ibok, E. ; McBride, M. ; Tsiang, J. ; Ju, DH ; Fang, P.
Author_Institution :
AMD, Austin, TX, USA
Abstract :
This paper presents how root causes of PID to 29A Gate Oxide (Gox) in 130 nm CMOS devices for high performance μP application were identified. Two types of failures of Gox capacitors (CAPs) were observed. One appeared as shorts of CAPs (Mode-A), while the other one creates a small distribution of lower breakdown field (Mode-B) of Gox CAPs. Through extensive experiments, these two types of failures were related to PID of two separate processing tools
Keywords :
CMOS digital integrated circuits; MOS capacitors; failure analysis; microprocessor chips; nitridation; plasma materials processing; 130 nm; 29A nitrided gate oxide; CMOS capacitor; breakdown field; failure analysis; microprocessor manufacturing; plasma induced damage; short circuit; DH-HEMTs; Electric breakdown; Integrated circuit interconnections; Manufacturing; Microprocessors; Plasma devices; Plasma displays; Plasma materials processing; Sputtering; Testing;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911897
