Soft breakdown model of 20 Å gate oxide

Author

Ko, Chin-Yuan ; Shiue, R.Y. ; Yue, J.

Author_Institution

Dept. of Reliability Assurance, Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2000

fDate

2000

Firstpage

51

Lastpage

53

Abstract

In this work, we apply percolation concepts and point contact concept to explain almost all the soft breakdown (SB) phenomenon of 20 Å gate oxide, and this is the first time to combine theses two theory to model the ultra-thin oxide soft breakdown mechanism. Percolation model is a approach based on statistics; whereas, point contact interpret SB phenomena in view of physics. Statistical approach can explain statistical properties, and physical approach can explain physical features. By proving the conduction after SB is dominated by ballistic transport, we can explain two-level fluctuation by means of point contact

Keywords

MOS capacitors; percolation; point contacts; semiconductor device breakdown; 20 angstrom; MOS capacitor; SiO₂; ballistic transport; electrical conduction; percolation model; point contact; soft breakdown; statistical properties; two-level fluctuation; ultrathin gate oxide; Charge measurement; Conductors; Current measurement; Dielectric breakdown; Electric breakdown; Electrons; Semiconductor device breakdown; Stress measurement; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2000 IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-6392-2

Type

conf

DOI

10.1109/IRWS.2000.911899

Filename

911899