Title :
MEMS resonators with extremely low vibration and shock sensitivity
Author :
Kim, Bongsang ; Olsson, Roy H., III ; Smart, Kevin ; Wojciechowski, Kenneth E.
Author_Institution :
MEMS Technol. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
MEMS resonator-based oscillators have demonstrated extreme low susceptibility to acceleration. Specifically, oscillators were built employing 100nm-gap electro-statically transduced polysilicon MEMS resonators. An oscillator based upon the Lamé-mode of a square-shaped resonator anchored at four corners demonstrated a measured acceleration sensitivity of Γin-plane= 2.1ppb/g and Γout-of-plane=3.8ppb/g. An oscillator referencing the same design resonator with an additional anchor at the center measured even lower acceleration sensitivity by 5×, Γout-of-plane= 0.74 ppb/g. These measured values are on-par with the current low-G sensitivity quartz-based oscillators. In separately performed drop tests, these oscillators have shown only -7.7 ppm frequency deviation through an 11,000G impact, which corresponds to an acceleration sensitivity of 0.70 ppb/g. Such extremely low sensitivity to vibrations and shocks enables the use MEMS resonators in environments with extremely high accelerations such as in military and aerospace applications.
Keywords :
electrostatic devices; micromechanical resonators; microsensors; oscillators; Lame mode; MEMS resonators; electrostatically transduced polysilicon; extremely low vibration; measured acceleration sensitivity; oscillators; shock sensitivity; square shaped resonator; Acceleration; Frequency measurement; Micromechanical devices; Oscillators; Resonant frequency; Sensitivity; Stress;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6127186