Title :
Basic BEOL parameters from isothermal wafer level electromigration testing
Author :
Sullivan, Tim D. ; Lee, Tom ; Tibel, Deborah
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
Use of the isothermal electromigration wafer level test method necessarily establishes a unique relationship between the line initial resistance and the magnitude of the initial current selected for testing. The relationship, coupled with line resistance provides a powerful diagnostic tool for evaluation of electromigration failure data
Keywords :
electromigration; failure analysis; life testing; metallisation; BEOL parameters; failure distribution; isothermal wafer-level electromigration testing; metal line resistance; Circuit testing; Electrical resistance measurement; Electromigration; Isothermal processes; Packaging; Resistance heating; Temperature control; Thermal conductivity; Thermal resistance; Wafer scale integration;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911905
