Title :
A dual-band 1.7V CMOS variable gain low noise amplifier
Author :
Azevedo, Fernando ; Fortes, Fernando ; Vaz, João Caldinhas ; Rosário, Maria João
Author_Institution :
Inst. Super. de Engenharia de Lisboa, Lisbon
Abstract :
The design and simulation of a dual-band monolithic low noise amplifier, with active balun and gain control integrated on the same die, is presented on this paper. The circuit includes an internal DAC, allowing sixteen gain levels with digital control. The fully integrated circuit was implemented in a 0.35 mum AMS CMOS standard technology and simulated with BSIM3 model. Simulations show a 16 dB (1 dB/step) dynamic gain variation in a 1.4-1.7 GHz band (includes dual sub-bands), a phase and transducer gain magnitude errors less than 1.6deg and 0.2 dB, respectively, a 1.24 dB noise figure and -23 dBm input-referred 1 dB compression point both at maximum gain, 50 Omega input and output match, while drawing less than 7.5 mA from a 1.7 V power supply, including analog and digital system.
Keywords :
CMOS integrated circuits; baluns; digital-analogue conversion; gain control; low noise amplifiers; radiofrequency integrated circuits; BSIM3 model; CMOS RFIC; CMOS standard technology; active balun; digital control; digital-to-analog converter; dual-band CMOS variable gain low noise amplifier; dual-band monolithic low noise amplifier; frequency 1.4 GHz to 1.7 GHz; gain 16 dB; gain control; internal DAC; noise figure 1.24 dB; resistance 50 ohm; size 0.35 mum; voltage 1.7 V; Active noise reduction; CMOS technology; Circuit simulation; Digital control; Dual band; Gain control; Impedance matching; Integrated circuit modeling; Integrated circuit noise; Low-noise amplifiers; CMOS RFIC; balun; dual-band; front-end; low noise amplifier (LNA); receiver; wireless;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era, 2007. DTIS. International Conference on
Conference_Location :
Rabat
Print_ISBN :
978-1-4244-1277-8
Electronic_ISBN :
978-1-4244-1278-5
DOI :
10.1109/DTIS.2007.4449520